Full quantum mechanical simulation of a novel nanoscale DG-MOSFET: 2D NEGF approach

In this paper the electrical characteristics of a novel nanoscale double-gate MOSFET (DG-MOSFET) have been investigate by a full quantum mechanical simulation framework. This framework consists of non-equilibrium Green's function (NEGF) solved self-consistently with Poisson's equation. Quantum transport equations are solved in two-dimension (2D) by recursive NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured. In this novel DG-MOSFET structure, a front gate consists of two side gates to electrically shield the channel region from any drain voltage variation. This structure exhibits significantly better short channel effects than conventional DG-MOSFET in nanometer regime.